data sheet 1 05.99 sipmos ? small-signal-transistor features ? single n channel ? enhancement mode ? avalanche rated ? logic level ? d v /d t rated product summary drain source voltage v ds 30 v drain-source on-state resistance r ds(on) 0.013 ? continuous drain current i d 9.8 a type package ordering code bso 302sn so 8 q67041-s4029 continuous drain current t c = 25 ?c i d 9.8 a pulsed drain current t c = 25 ?c 39.2 i dpulse avalanche energy, single pulse i d = 9.8 a, v dd = 25 v, r gs = 25 ? mj e as 250 avalanche current,periodic limited by t jmax i ar 9.8 a avalanche energy, periodic limited by t jmax mj e ar 0.2 reverse diode d v /d t i s = 9.8 a, v ds = 24 v, d i /d t = 200 a/?, t jmax = 150 ?c d v /d t 6 kv/? gate source voltage v v gs 20 power dissipation t c = 25 ?c p tot 2 w operating temperature ?c t j -55 ... +150 storage temperature t stg -55 ... +150 iec climatic category; din iec 68-1 55/150/56 maximum ratings, at t j = 25 ?c, unless otherwise specified parameter symbol value unit preliminary data bso 302sn
bso 302sn data sheet 2 05.99 thermal characteristics parameter symbol unit values typ. min. max. characteristics 25 k/w r thjs - - thermal resistance, junction - soldering point 75 r th(ja) - thermal resistance @ 10 sec., min. footprint - 62.5 r th(ja) - - thermal resistance @ 10 sec., 6 cm 2 cooling area 1) electrical characteristics, at t j = 25 ?c, unless otherwise specified parameter values symbol unit typ. min. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d = 80 ? v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 30 v, v gs = 0 v, t j = 25 ?c v ds = 30 v, v gs = 0 v, t j = 150 ?c i dss - - 0.1 - 1 100 ? gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-state resistance v gs = 4.5 v, i d = 8.6 a v gs = 10 v, i d = 9.8 a r ds(on) - - 0.012 0.008 0.017 0.013 ? 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70? thick) copper area for drain connection. pcb is vertical without blown air.
bso 302sn data sheet 3 05.99 electrical characteristics parameter values symbol unit max. min. typ. characteristics s transconductance v ds 2* i d * r ds(on)max , i d = 8.6 a 28 - 14 g fs pf c iss input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz - 2040 1630 output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz 710 - c oss 890 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 420 335 - n s turn-on delay time v dd = 15 v, v gs = 4.5 v, i d = 8.6 a, r g = 1.6 ? t d(on) 30 20 180 t r rise time v dd = 15 v, v gs = 4.5 v, i d = 8.6 a, r g = 1.6 ? - 120 55 turn-off delay time v dd = 15 v, v gs = 4.5 v, i d = 8.6 a, r g = 1.6 ? t d(off) n s 37 - 110 fall time v dd = 15 v, v gs = 4.5 v, i d = 8.6 a, r g = 1.6 ? - t f n s 72
bso 302sn data sheet 4 05.99 electrical characteristics, at t j = 25 ?c, unless otherwise specified parameter symbol values unit at t j = 25 ?c, unless otherwise specified min. typ. max. dynamic characteristics gate charge at threshold v dd = 24 v, i d 0,1 a, v gs = 0 to 1 v q g(th) - 2 3 nc gate charge at v gs =5v v dd = 24 v, i d = 9.8 a , v gs = 0 to 5 v q g(5) - 37 55 gate charge total v dd = 15 v, i d = 9.8 a, v gs = 0 to 10 v q g - 60 90 nc gate plateau voltage v dd = 24 v, i d = 9.8 a v (plateau) - 2.95 - v reverse diode inverse diode continuous forward current t c = 25 ?c i s - - 9.8 a inverse diode direct current,pulsed t c = 25 ?c i sm - - 39.2 inverse diode forward voltage v gs = 0 v, i f = 19.6 a v sd - 0.9 1.6 v reverse recovery time v r = 15 v, i f = i s , d i f /d t = 100 a/? t rr - 70 105 ns reverse recovery charge v r = 15 v, i f = l s , d i f /d t = 100 a/? q rr - 80 120 ?
bso 302sn data sheet 5 05.99 drain current i d = f ( t a ) 0 20 40 60 80 100 120 ?c 160 t a 0 1 2 3 4 5 6 7 8 9 a 11 bso 302sn i d power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 ?c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 w 2.6 bso 302sn p tot safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 ?c 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a bso 302sn i d r ds( on) = v d s dc 10 ms 1 ms 100 ? 10 ? t p = 2.2 ? transient thermal impedance z thja = f (t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -1 10 0 10 1 10 2 10 k/w bso 302sn z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
bso 302sn data sheet 6 05.99 typ. output characteristics i d = f ( v ds ) parameter: t p = 80 ? 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 2 4 6 8 10 12 14 16 18 20 a 24 bso 302sn i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l p tot = 2 w l 10.0 drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 8.6 a, v gs = 4.5 v -60 -20 20 60 100 140 ?c 200 t j 0.000 0.004 0.008 0.012 0.016 0.020 0.024 0.028 0.032 ? 0.040 bso 302sn r ds(on) typ 98% typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c iss c oss c rss
bso 302sn data sheet 7 05.99 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 ? v ds 2 x i d x r ds(on) max 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs 0 2 4 6 8 10 12 14 16 a 20 i d gate threshold voltage v gs(th) = f ( t j ) parameter : v gs = v ds , i d = 80 ? -60 -20 20 60 100 v 160 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v 3.0 v gs(th) min typ max forward characteristics of reverse diode i f = f ( v sd ) parameter: t j , t p = 80 ? 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -1 10 0 10 1 10 2 10 a bso 302sn i f t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
bso 302sn data sheet 8 05.99 avalanche energy e as = f ( t j ) parameter: i d = 9.8 a, v dd = 25 v r gs = 25 ? 20 40 60 80 100 120 ?c 160 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as typ. gate charge v gs = f ( q gate ) parameter: i d puls = 9.8 a 0 10 20 30 40 50 60 70 nc 85 q gate 0 2 4 6 8 10 12 v 16 bso 302sn v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 ?c 180 t j 27 28 29 30 31 32 33 34 35 v 37 bso 302sn v (br)dss
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